STL4N10F7
Datasheet
N-channel 100 V, 62 mΩ typ.
, 4.
5 A STripFET™ F7 Power
MOSFET in a PowerFLAT™ 3.
3x3.
3 package
D(5, 6, 7, 8) G(4)
S(1, 2, 3)
8 76 5
1234
AM15810v1
Features
Order code
VDS
STL4N10F7
100 V
• Excellent FoM (figure of merit) • Low Crss/Ciss ration for EMI immunity • High avalanche ruggedness
RDS(on) max.
70 mΩ
ID 4.
5 A
Applications
• Switching applications
Description
This N-channel Power
MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Maturity status link
STL4N10F7
Device summary
Order cod...