STL8N10F7
N-channel 100 V, 17 mΩ typ.
, 8 A STripFET™ F7 Power
MOSFET in a PowerFLAT™ 3.
3x3.
3 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS RDS(on) max.
ID PTOT
STL8N10F7 100 V
20 mΩ
8 A 2.
9 W
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power
MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code ST...