STL9N60M2
N-channel 600 V, 0.
76 Ω typ.
, 4.
8 A MDmesh II Plus™ low Qg Power
MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet - production data
1 2 3 4
PowerFLAT™ 5x6 HV
Features
Order code VDS @ TJmax RDS(on) max ID
STL9N60M2
650 V
0.
86 Ω 4.
8 A
• Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected
Applications
• Switching applications
Figure 1.
Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Description
This device is an N-channel Power
MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
This revolutionary Power
MOSFET associates a vertical structure t...