Gr Pr
STM121N
Ver 1.
1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ID
2.
8A
R DS(ON) (m ) Max
155 @ VGS=10V 192 @ VGS=4.
5V
D2 D2 D1
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous -Pulsed
b d a
Limit 100 ±20 TA=25°C TA=70°C 2.
8 2.
2 10 12 TA=25°C TA=70°C 2 1.
28 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissip...