| Part Number | STM7820 |
| Manufacturer | SamHop |
| Title | N-Channel Enhancement Mode Field Effect Transistor |
| Description | S T M7820 S amHop Microelectronics C orp. Apr.21, 2005 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F ... |
| Features |
gFS
c
Condition
V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 5A V DS = 10V, V GS = 10V V DS = 10V, ID = 8A
Min Typ C Max Unit
25 1 V uA 100 nA 1 1.8 20 30 12 960 240 140 3 30 V
m ohm m ohm
OFF CHAR ACTE R IS TICS
Dr... |
| File Size | 575.62KB |
| Datasheet |
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STM7822A : S T M7822A S amHop Microelectronics C orp. Arp,20 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F E AT UR E S ( m W ) Max ID 14A R DS (ON) S uper high dense cell design for low R DS (ON ). 7 @ V G S = 10V 9 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T c=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol Vspike V DS V GS ID IDM IS PD T J , T S.
STM7822 : S T M7822 S amHop Microelectronics C orp. Arp,20 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F E AT UR E S ( m W ) Max ID 14A R DS (ON) S uper high dense cell design for low R DS (ON ). 6.5 @ V G S = 10V 7.5 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T c=25C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange a S ymbol Vspike V DS V GS ID IDM IS PD T J ,.
STM7821 : S T M7821 S amHop Microelectronics C orp. Arp,20 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 25V F E AT UR E S ( m W ) Max ID 10A R DS (ON) S uper high dense cell design for low R DS (ON ). 9.5 @ V G S = 10V 20 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T c=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol Vspike V DS V GS ID IDM IS PD T J , T.