STP110N7F6
N-channel 68 V, 0.
0055 Ω typ.
, 110 A, STripFET™ F6 Power
MOSFET in a TO-220 package
Datasheet - production data
Features
Order code VDS RDS(on)max.
ID PTOT TAB STP110N7F6 68 V 0.
0065 Ω 110 A 176 W
3 2 1
TO-220
Figure 1.
Internal schematic diagram
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*
• Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power
MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
The resulting Power
MOSFET exhibits very low RDS(on) in all packages.
6
Order code STP110N7F6
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Table 1.
Device summary
Marking
Package...