STP12NB30 STP12NB30FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™
MOSFET
PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P
s s s s s
V DSS 300 V 300 V
R DS(on) 0.
40 Ω 0.
40 Ω
ID 12A 6.
5 A
TYPICAL RDS(on) = 0.
34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1 2 3
1 2 3
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power
MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge an...