STP140N8F7
N-channel 80 V, 3.
5 mΩ typ.
, 90 A STripFET™ F7 Power
MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
Features
Order code STP140N8F7
VDS 80 V
RDS(on) max.
4.
3 mΩ
ID 90 A
PTOT 200 W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power
MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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