STP160N4LF6
N-channel 40 V, 0.
0021 mΩ typ.
, 120 A, STripFET™ VI DeepGATE™ Power
MOSFET in a TO-220 package
Datasheet - production data
TAB
TO-220
3 2 1
Features
Order code VDS RDS(on) max ID PTOT STP160N4LF6 40 V 0.
0029 Ω 120 A 150 W
• RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • Logic level drive • High avalanche ruggedness • 100% avalanche tested
Figure 1.
Internal schematic diagram
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*
Applications
• Switching applications
Description
This device is an N-channel Power
MOSFET
th
developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power
MOSFET exhibits the lowest RDS(on) in all packages.
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