STP16NE06L STP16NE06L/FP
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE™ POWER
MOSFET
TARGET DATA TYPE ST P16NE06L ST P16NE06LFP
s s s s s s
V DSS 60 V 60 V
R DS(on) 0.
12 Ω 0.
12 Ω
ID 16 A 11 A
TYPICAL RDS(on) = 0.
09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
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DESCRIPTION This Power
Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alig...