STP18N60DM2
N-channel 600 V, 0.
260 Ω typ.
, 12 A MDMesh™ DM2 Power
MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram D(2, TAB)
G(1)
Features
Order code STP18N60DM2
VDS 600 V
RDS(on) max.
0.
295 Ω
ID 12 A
Fast-recovery body diode Extremely low gate charge and input
capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Description
This high
voltage N-channel Power
MOSFET is part of the MDmesh™ DM2 fast recovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding hi...