Isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
STP30NF10FP
·FEATURES ·Typical RDS(on)=0.
038Ω ·Application oriented characterization ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High-efficiency DC-DC coverters ·Motor control
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
100
VGSS ID IDM
Gate-Source
Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
18 13
72
PD
Total Dissipation
30
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
...