STP60NE03L-10
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER
MOSFET
T YPE ST P60NE03L-10
s s s s s
V DSS 30 V
R DS(o n) 0.
010 Ω
ID 60 A
TYPICAL RDS(on) = 0.
007 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION
1 2 3
DESCRIPTION This Power
Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIV...