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STP6623

Part Number STP6623
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description SCRIPTION STP6623 P Channel Enhancement Mode MOSFET -18.0A STP6621 is the P-Channel logic enhancement mode power field...
Datasheet STP6623




Overview
SCRIPTION STP6623 P Channel Enhancement Mode MOSFET -18.
0A STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.
PIN CONFIGURATION SOP-8 FEATURE -60V/-10.
0A, RDS(ON) = 23mΩ (Typ.
) @VGS =-10V -60V/-8.
0A, RDS(ON) = 28mΩ @VGS = -4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design P...






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