STF6N60M2, STP6N60M2, STU6N60M2
N-channel 600 V, 1.
06 Ω typ.
, 4.
5 A MDmesh II Plus™ low Qg Power
MOSFET in TO-220FP, TO-220 and IPAK packages
Datasheet - production data
TAB
3 2 1
TO-220FP
TAB
IPAK
3
2 1
3 2 1
TO-220
Figure 1.
Internal schematic diagram , TAB
Features
Order codes
STF6N60M2 STP6N60M2 STU6N60M2
VDS @ TJmax
RDS(on) max
ID
650 V 1.
2 Ω 4.
5 A
• Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected
Applications
• Switching applications
AM15572v1
Description
These devices are N-channel Power
MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
Th...