STP77N6F6
N-channel 60 V, 6.
6 mΩ typ.
, 77 A STripFET™ VI DeepGATE™ Power
MOSFET in a TO-220 package
Datasheet — production data
Features
Order code VDS
RDS(on) max
ID PTOT
STP77N6F6 60 V 7.
9 mΩ (VGS=10 V) 77 A 80 W
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge
Applications
■ Switching applications
Description
This device is an N-channel Power
MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power
MOSFET exhibits the lowest RDS(on) in all packages.
TAB
3 2 1
TO-220
Figure 1.
Internal schematic diagram...