isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
STP8NK80ZFP
DESCRIPTION ·Drain Current ID=6.
2A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=800V(Min) ·100% avalanche tested ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
600
V
VGS
Gate-Source
Voltage
±30
V
Drain Current-continuous@ TC=25℃
6.
2
ID
A
Drain Current-continuous@ TC=100℃
3.
9
ICM
Collector Current-Peak
24.
8
A
Ptot
Total Dissipation@TC=25℃
30
W
Tj
Max.
Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature ...