Part Number
|
STPSC10065 |
Manufacturer
|
STMicroelectronics |
Description
|
Schottky silicon carbide diode |
Published
|
May 7, 2020 |
Detailed Description
|
STPSC10065
Datasheet
650 V, 10 A low VF power Schottky silicon carbide diode
K
A
K
K
A K
TO-220AC
AA NC
D²PAK HV
...
|
Datasheet
|
STPSC10065
|
Overview
STPSC10065
Datasheet
650 V, 10 A low VF power Schottky silicon carbide diode
K
A
K
K
A K
TO-220AC
AA NC
D²PAK HV
Product label
Features
• No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.
38 mm min.
• ECOPACK2 compliant component
Applications
• DC/DC converter • High frequency inverter • Snubber • Boost PFC function
Description
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design ...
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