Part Number
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STPSC12065 |
Manufacturer
|
STMicroelectronics |
Description
|
650V power Schottky silicon carbide diode |
Published
|
May 10, 2019 |
Detailed Description
|
STPSC12065
Datasheet
650 V, 12 A power Schottky silicon carbide diode
K K
KA NC
D²PAK
K
A K
AA NC
D²PAK HV
A K
TO-220...
|
Datasheet
|
STPSC12065
|
Overview
STPSC12065
Datasheet
650 V, 12 A power Schottky silicon carbide diode
K K
KA NC
D²PAK
K
A K
AA NC
D²PAK HV
A K
TO-220AC
Product label
Features
• No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.
38 mm min.
• ECOPACK2 compliant • Power efficient product
Applications
• DC/DC converter • High frequency inverter • Snubber • Boost PFC function
Description
The SiC diode is an ultra high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the ...
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