Part Number
|
STPSC12C065-Y |
Manufacturer
|
STMicroelectronics |
Description
|
Automotive 650V power Schottky silicon carbide diode |
Published
|
Aug 2, 2019 |
Detailed Description
|
STPSC12C065-Y
Automotive 650 V power Schottky silicon carbide diode
$ .
.
72$&
$ .
Features
• No or negligible...
|
Datasheet
|
STPSC12C065-Y
|
Overview
STPSC12C065-Y
Automotive 650 V power Schottky silicon carbide diode
$ .
.
72$&
$ .
Features
• No or negligible reverse recovery • Switching behavior independent of
temperature • Dedicated to PFC applications • High forward surge capability • AEC-Q101 qualified • PPAP capable • ECOPACK®2 compliant component
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.
The minimal capacitive...
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