Part Number
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STPSC406 |
Manufacturer
|
ST Microelectronics |
Description
|
600V power Schottky silicon carbide diode |
Published
|
Mar 1, 2010 |
Detailed Description
|
com
STPSC406
600 V power Schottky silicon carbide diode
Features
■ ■ ■
No or negligible reverse recove...
|
Datasheet
|
STPSC406
|
Overview
com
STPSC406
600 V power Schottky silicon carbide diode
Features
■ ■ ■
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode
K
A K
Description
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible.
The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
TO-...
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