STRH8N10
Datasheet
Rad-Hard 100 V, 6 A, N-channel Power
MOSFET
2 1
3
SMD.
5
D(3)
G(1)
S(2)
SC3015C
Product status link STRH8N10
Features
VDS 100 V
ID
RDS(on) typ.
Qgtyp.
6A
0.
27 Ω
18.
5 nC
• Fast switching • 100 % avalanche tested • Hermetic package • 50 krad TID • SEE radiation hardened
Description
The STRH8N10 is a N-channel Power
MOSFET able to operate under severe environment conditions and radiation exposure.
It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE).
Qualified as per ESCC detail specification No.
5205/023 and available in SMD.
5 hermetic package it is specifically recommended for space and harsh e...