| Part Number | STS2306A |
| Manufacturer | SamHop Microelectronics |
| Title | N-Channel MOSFET |
| Description | Green Product S T S 2306A Apr. 27 2010 V er1.1 S amHop Microelectronics C orp. N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T... |
| Features |
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS
c
S ymbol
Condition
V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V ,VDS = 0V V DS = V GS , ID = 250uA
Min Typ C Max Unit
20 1 10 0.5 0.9 30 40 ... |
| File Size | 140.00KB |
| Datasheet |
|
STS2306E : Green Product S T S 2306E J an. 10 2008 V er1.0 S amHop Microelectronics C orp. N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m Ω ) Max ID 6.5A R DS (ON) S uper high dense cell design for low R DS (ON ). 30 @ V G S = 4.5V 40 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID.
STS2306 : S amHop Microelectronics C orp. S T S 2306 Apr,21 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m £[ ) Max ID 2.8A R DS (ON) S uper high dense cell design for low R DS (ON ). 45 @ V G S = 4.5V 60 @ V G S =2.5V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 8 2.8 12 1..