STS26N3LLH6
N-channel 30 V, 0.
0038 Ω, 26 A, SO-8 STripFET™ VI DeepGATE™ Power
MOSFET
Features
Type STS26N3LLH6
VDSS 30 V
RDS(on) max
0.
0044 Ω
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge
ID 26 A
Applications
■ Switching applications
Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power
MOSFET exhibits the lowest RDS(on) in all packages.
8 76 5 1 2 34
SO-8
Figure 1.
Internal schematic diagram
Table 1.
Device summary Order code
STS26N3LLH6
Marking 26G3L
Packag SO-8...