STT818B
High gain low
voltage PNP power transistor
Features
■ Very low collector to emitter saturation
voltage ■ DC current gain 100 (hFE) ■ 3 A continuous collector current (IC)
Applications
■ Power management in portable equipments ■ Switching regulator in battery charger
applications
Description
The device is manufactured in low
voltage PNP Planar Technology with "Base Island" layout.
The resulting Transistor shows exceptional high gain performance coupled with very low saturation
voltage.
SOT23-6L Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
Marking
STT818B
818B
Package SOT23-6L
Packaging Tape & reel
August 2007
Rev 5
1/10
www.
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