N-CHANNEL 900V - 1.
1 Ω - 7.
3 A Max220/Max220I PowerMesh™
MOSFET
TYPE STU7NB90 STU7NB90I com
s s s s s s
STU7NB90 STU7NB90I
VDSS 900 V 900 V
RDS(on) 1.
45 Ω 1.
45 Ω
ID 7.
3 A 7.
3 A
TYPICAL RDS(on) = 1.
1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED
VOLTAGE SPREAD
1
2
3
Max220
Max220I
DESCRIPTION Using the latest high
voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power
MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional ...