STU/D9916L
SamHop Microelectronics Corp.
Preliminary Mar.
25 2004
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
com 30V
FEATURES
( m £[ ) Max
ID
25A
RDS(ON)
Super high dense cell design for low RDS(ON).
30@ VGS = 10V 40@ VGS = 4.
5V
Rugged and reliable.
TO-252 and TO-251 Package.
D
D G S
G D S
G
SDU SERIES TO-252AA(D-PAK)
SDD SERIES TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous a @TA= 25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD...