STW12N170K5
Datasheet
N-channel 1700 V, 2.
3 Ω typ.
, 5 A, MDmesh K5 Power
MOSFET in a TO‑247 package
3 2 1
TO-247
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Features
Order code
VDS
RDS(on) max.
ID
STW12N170K5
1700 V
2.
9 Ω
5A
• Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • Zener-protected
PTOT 250 W
Applications
• Switching applications
Description
This very high
voltage N-channel Power
MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
P...