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STH15NA50/FI STW15NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
R DS( on) 0.
4 Ω 0.
4 Ω 0.
4 Ω ID 14.
6 A 9.
3 A 14.
6 A
TYPE
V DSS 500 V 500 V 500 V
STH15NA50 STH15NA50FI STW15NA50
TO-247
s s s s s s s
TYPICAL RDS(on) = 0.
33 Ω ± 30V GATE TO SOURCE
VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD
VOLTAGE SPREAD
3 2 1
DESCRIPTION This series of POWER
MOSFETS represents the most advanced high
voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, un...