isc N-Channel
Mosfet Transistor
·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
600
V
VGS
Gate-Source
Voltage
±25
V
ID
Drain Current-continuous@ TC=25℃
13
A
IDM
Pulse Drain Current
52
A
Ptot
Total Dissipation@TC=25℃
110
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Therma...