Isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
STW21NM60ND
·FEATURES ·With TO-247 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
600
V
VGSS
Gate-Source
Voltage
±25
V
ID
Drain Current-Continuous@TC=25℃ TC=125℃
17 10
A
IDM
Drain Current-Single Pulsed
68
A
PD
Total Dissipation @TC=25℃
140
W
Tch
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
...