SUM60N02-3m9P
Vishay Siliconix
N-Channel 20-V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) 20 rDS(on) (Ω) 0.
0039 at VGS = 10 V 0.
0052 at VGS = 4.
5 V ID (A)a 60 60
FEATURES
• • • • TrenchFET® Power
MOSFET 175 °C Junction Temperature 100 % Rg Tested 100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• OR-ing
D
TO-263
G DRAIN connected to TAB G D S S N-Channel
MOSFET
Top View Ordering Information: SUM60N02-3m9P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Ope...