SUP28N15-52
New Product
Vishay Siliconix
N-Channel 150-V (D-S) 175_C
MOSFET
PRODUCT SUMMARY
VDS (V)
150
FEATURES
ID (A)
28 26
rDS(on) (W)
0.
052 @ VGS = 10 V 0.
060 @ VGS = 6 V
D TrenchFETr Power
MOSFET D 175_C Junction Temperature D PWM Optimized
APPLICATIONS
D Primary Side Switch
D
TO-220AB
G DRAIN connected to TAB
G D S Top View
S N-Channel
MOSFET
SUP28N15-52
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.
1 mH TC = 25_C Maximum Power Dissipatio...