SUP57N20-33
Vishay Siliconix
N-Channel 200-V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
200 0.
033 at VGS = 10 V
ID (A) 57
TO-220AB
FEATURES • TrenchFET® Power
MOSFET • 175 °C Junction Temperature
APPLICATIONS • Isolated DC/DC converters
- Primary-Side Switch
D
Available
RoHS*
COMPLIANT
DRAIN connected to TAB
GD S Top View
Ordering Information: SUP57N20-33 SUP57N20-33-E3 (Lead (Pb)-free)
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single P...