SUP60N02-4m5P
Vishay Siliconix
N-Channel 20-V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
0.
0045 at VGS = 10 V 20
0.
0065 at VGS = 4.
5 V
ID (A)a 60 60
TO-220AB
FEATURES • TrenchFET® Power
MOSFET • 175 °C Junction Temperature • 100 % Rg Tested • 100 % UIS Tested
APPLICATIONS • OR-ing
D
RoHS
COMPLIANT
DRAIN connected to TAB
G
GD S Top View
Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Current Single Pulse Ava...