SUP/SUB70N03-09BP
New Product
Vishay Siliconix
N-Channel 30-V (D-S), 175_C,
MOSFET PWM Optimized
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.
009 @ VGS = 10 V 0.
013 @ VGS = 4.
5 V
ID (A)
70a 60
TO-220AB
D
TO-263
G DRAIN connected to TAB G G D S Top View SUP70N03-09BP SUB70N03-09BP N-Channel
MOSFET D S
Top View S
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energya L = 0.
1 mH TC = 25_C TC = 25_C TC = 100_C ID IDM IAR EAR PD TJ, Tstg
Symbol
VDS VGS
Limit
...