SUP85N10-10, SUB85N10-10
Vishay Siliconix
N-Channel 100-V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100 0.
0105 at VGS = 10 V 0.
012 at VGS = 4.
5 V
TO-220AB
ID (A) 85a
FEATURES • TrenchFET® Power
MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
TO-263
D
DRAIN connected to TAB
GD S Top View SUP85N10-10
ORDERING INFORMATION
Package TO-220AB TO-263
G DS Top View
SUB85N10-10
G
S N-Channel
MOSFET
Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC =...