Silan Microelectronics
SVS4N65F/MJ/D_Datasheet
4A, 650V DP MOS POWER TRANSISTOR
GENERAL DESCRIPTION
SVS4N65F/MJ/D is an N-channel enhancement mode high
voltage power
MOSFETs produced using the new platform of Silan’s DP MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.
e.
, suitable for hard and soft switching topologies.
2
1 3
1.
Gate 2.
Drain 3.
Source
1 3
TO-252-2L
FEATURES
4A, 650V, RDS(on)(typ)=0.
95Ω@VGS=10V New revolutionary high
voltage technology Ultra low gate charge Extreme dv/dt rated...