SVS7N60F(FJ)(D)D2_Datasheet
7A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high
voltage power
MOSFETs produced using Silan’s DP MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies.
FEATURES
7A,600V, RDS(on)(typ.
)=0.
48@VGS=10V New revolutionary high
voltage technology Ultra low gate charge Enhanced avalanche capability Extreme dv/dt rated High peak current capability
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