SAMWIN
SW1N55D
N-channel IPAK
MOSFET
Features
TO-251
■ High ruggedness ■ RDS(ON) (Max6.
5Ω)@VGS=10V ■ Gate Charge (Typical 7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
12 3
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 550V ID : 1A RDS(ON) :6.
5Ω
2
1
3
Order Codes
Item 1
Sales Type SW I 1N55
Marking SW1N55...