SAMWIN
SW1N60A
N-channel
MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-92
12 3
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at AC adaptors and SMPS.
BVDSS : 600V ID : 0.
5A RDS(ON) : 15ohm
2
1
3
Order Codes
Item 1
Sales Type SW C 1N60A
Marking SW1N60A
Package TO-92
Packaging TAPE
Absolute maximum rat...