SAMWIN
SW226NV
Features
IPAK
DPAK
■ High ruggedness ■ RDS(ON) (Max 2.
5 Ω)@VGS=10V ■ Gate Charge (Typical 34nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
12 3
2 13
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
N-channel
MOSFET
BVDSS : 600V ID : 4.
0A RDS(ON) : 2.
5ohm
2
1
3
Order Codes
Item 1 2
Sales Type SW I 226NV...