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SAMWIN
SW4N60A
N-channel
MOSFET
BVDSS : 600V ID : 4.
0A RDS(ON) : 2.
2ohm
1 2 1 3 2 2
Features
■ High ruggedness ■ RDS(ON) (Max 2.
2 Ω)@VGS=10V ■ Gate Charge (Typ 25nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220F
TO-220
3 1
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
3
Order Codes
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