SAMWIN
SW4N60D
N-channel TO-220F/I-PAKN/D-PAK
MOSFET
Features
TO-220F TO-251N TO-252
■ High ruggedness ■ RDS(ON) (Max 2.
2Ω)@VGS=10V ■ Gate Charge (Typ 18nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
123
12 3
12 3
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 600V ID : 4A RDS(ON) : 2.
2Ω
2
1
3
Order Codes
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