SAMWIN
SW4N80B
N-channel TO-220F
MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 4Ω)@VGS=10V ■ Gate Charge (Typical 14nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220F
TO-251N
1 2
3
1 2
3
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 800V ID : 4A RDS(ON) : 4ohm
2
1
3
Order Codes
Item Sales Type 1 SW F...