SAMWIN
Features
■ High ruggedness ■ RDS(ON) (Max 2.
2Ω)@VGS=10V ■ Gate Charge (Typical 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
SW5N60
N-channel TO-220F
MOSFET
TO-220F
BVDSS : 600V ID : 5.
0A RDS(ON) : 2.
2ohm
1
2
3
2
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
1 3
Order Codes
Item 1 Sales Type SW F 5N60 Mark...