SAMWIN
SW5N80
N-channel
MOSFET
Features
TO-220F
■ High ruggedness ■ RDS(ON) (Max 1.
8 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
1 2 3
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 800V ID : 5.
0A RDS(ON) : 1.
8ohm
2
1
3
Order Codes
Item 1
Sales Type SW F 5N80
Marking SW5N80...