SAMWIN
General Description Features
N-Channel
MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.
4 ohm : 9.
0 A : 26 nc : 72 W
SW630
This power
MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block and SMPS.
It’s typical application is TV and monitor.
D
w
w
w
.
D
a
t
a
S
h
e
e
t
4
U
.
c
o
m
G S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL ...