SAMWIN
SW6N90
N-channel TO-262
MOSFET
TO-262
Features
■ High ruggedness ■ RDS(ON) (Max 2.
3 Ω)@VGS=10V ■ Gate Charge (Typical 40nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
1 2
BVDSS : 900V ID : 6.
0A
RDS(ON) : 2.
3ohm
2 3
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
1
3
Ord...