SAMWIN
SW7N60A
N-channel
MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.
3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220F
TO-220
BVDSS : 600V ID : 7.
0A RDS(ON) : 1.
3ohm
1
2
1 3
2
3
2
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
1 3
Order Codes
Item 1 2 Sales Type SW P...